Members / Foreign Members
Karen N. Kocharyan
Specialization: Radiophysics and electronics
Place of birth: Yerevan
Date of birth: 22/08/1943
Membership: Foreign Member
Education

MS Diploma from Lomonosov State University, Moscow, Russia (1966) Doctor of Physics & Mathematics (1993) Fellow ANAS (1996).

Positions

Professor of Tufts University, USA (since 1997); Leading Research Associate at RENAISSANSE Inc.; Foreign Member ANAS (since 2006).

Membership of other Organizations

Senior Member, IEEE (since 2000).