Electrical engineering, ICT

The low-temperature plasma-assisted processing of materials has a great number of applications in modern technological processes such as manufacturing of semiconductor devices, LCD panels, MEMS etc. and replaces the traditional chemical technique more and more. Due to the reduction of the environmental pollution rate, high efficiency, productivity and resolution the plasma-assisted processing of materials becomes a fundamental technique in modern semiconductor production. This method was first invented and introduced in the seventies and has become a mature technique for semiconductor device manufacturing. Taking into account that plasma is a complex nonlinear system, and the fact that modern control systems have a need for big investments, the research emphasis was put on the development of reliable and efficient methods of monitoring and control of the RF plasma with a relatively low-cost. The aim of this project is to research the contemporary issues of RF plasma monitoring and control, to improve the existing methods, as well as to develop new methods allowing to increase the efficiency and reliability of these systems.

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There is a significant demand and a market, a significant difference between the market price and production costs, easy delivery, significant price to weight ratio.

Arsen Hakhumyan, Scientific Supervisor of the Institute of Radiophysics and Electronics of NAS RA
E-mail: arsen {[ at ]} irphe.am
Tel.: (+374 91) 450674